ESD11A3.3DT5G SERIES
Table 2. ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @V R = 0 and f = 1 MHz
I PP
Uni ? Directional TVS
Table 3. ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)
Device
V RWM
(V)
I R ( m A)
@ V RWM
V BR (V)
@ I T
(Note 2)
I T
C (pF),
uni ? directional
(Note 3)
V C (V)
@ I PP = 1 A
(Note 5)
V C (V)
IEC61000 ? 4 ? 2
(Note 6)
Device
ESD11A3.3DT5G
ESD11A5.0DT5G
Marking
2*
3*
Max
3.3
5.0
Max
1.0
0.1
Min
5.2
6.2
mA
1.0
1.0
Typ
25
20
Max
35
30
Max
7.8
9.5
Typ
Figures 1 thru 4
Figures 1 thru 4
*Rotated 90 ° clockwise.
2. V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.
3. Uni ? directional capacitance at f = 1 MHz, V R = 0 V, T A = 25 ° C (pin1 to pin 3; pin 2 to pin 3).
4. Bi ? directional capacitance at f = 1 MHz, V R = 0 V, T A = 25 ° C (pin1 to pin 2).
5. Surge current waveform per Figure 7.
6. Typical waveform. For test procedure see Figures 5 and 6 and Application Note AND8307/D.
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